SIHLL110TR-GE3 The Vishay Dale SIHLL110TR-GE3 is an N-Channel MOSFET designed for surface mounting. It offers a 100V drain-source voltage and 1.5A continuous current.
Mfr Part #:

SIHLL110TR-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHLL110TR-GE3 is an N-Channel MOSFET designed for surface mounting. It offers a 100V drain-source voltage and 1.5A continuous current.
✓ Total Stock: 268,500 pcs
$ Price Range: $0.99

SIHLL110TR-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
267,500 pcs
267500 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

SIHLL110TR-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHLL110TR-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHLL110TR-GE3 is a third-generation power MOSFET in an N-Channel configuration. It is designed for surface-mount applications using the SOT-223 package, providing improved thermal performance.

 

Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of 1.5A at 25°C case temperature. The Rds(on) is specified at a maximum of 540mOhm when driven at 5V gate-source voltage and 900mA drain current. The gate charge (Qg) is 6.1nC maximum at 5V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. Its SOT-223 package is suitable for automated pick-and-place assembly and wave soldering techniques. The device features a logic-level gate drive, dynamic dV/dt rating, and repetitive avalanche rating, making it suitable for various power switching applications.

SIHLL110TR-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SIHLL110TR-GE3 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SIHLL110TR-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHLL110TR-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHLL110TR-GE3 Features

  • 100V drain-source voltage rating.
  • 1.5A continuous drain current.
  • 540mOhm maximum Rds(on) at 5V.
  • Logic-level gate drive capability.
  • Surface mount SOT-223 package.

SIHLL110TR-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for logic-level gate drive.
  • Used in surface-mount designs.
  • Applications requiring 100V breakdown.

SIHLL110TR-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of SIHLL110TR-GE3?

100V.

What is the continuous drain current rating?

1.5A at Tc=25°C.

What is the on-resistance of this MOSFET?

540 mOhm maximum at Id=900mA and Vgs=5V.

What is the gate charge?

6.1 nC at Vgs=5V.

What is the input capacitance?

250 pF at Vds=25V.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the package type?

SOT-223 (also known as TO-261-4).

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