SIHH14N60E-T1-GE3 The Vishay SIHH14N60E-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency applications. It features a 600V breakdown voltage and a 16A continuous drain current.
Mfr Part #:

SIHH14N60E-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SIHH14N60E-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency applications. It features a 600V breakdown voltage and a 16A continuous drain current.
✓ Total Stock: 4,020 pcs
$ Price Range: $0.99

SIHH14N60E-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request

SIHH14N60E-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHH14N60E-T1-GE3 Description

Short technical summary and product information.

The Vishay SIHH14N60E-T1-GE3 is an N-Channel MOSFET from Vishay's E Series, designed for applications requiring reduced switching and conduction losses. It offers a high drain-source voltage rating of 600V and a continuous drain current of 16A at 25°C.

 

Key electrical characteristics include a low on-resistance of 255mOhm at 7A and 10V, a gate charge of 82nC maximum, and an input capacitance of 1416pF. The device operates over a wide temperature range of -55°C to 150°C.

 

This MOSFET is housed in a surface-mount PowerPAK 8x8 package, making it suitable for space-constrained designs. Its features, such as low figure-of-merit and avalanche energy rating, make it well-suited for server and telecom power supplies, switch mode power supplies (SMPS), and industrial applications like welding and motor drives.

SIHH14N60E-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiHH14N60E-T1-GE3 N-Channel MOSFET
Subcategory: Power MOSFET

SIHH14N60E-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIHH14N60E-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHH14N60E-T1-GE3 Features

  • 600V drain-source breakdown voltage.
  • 16A continuous drain current.
  • Low on-resistance of 255mOhm.
  • Surface mount PowerPAK 8x8 package.
  • Lead-free and halogen-free construction.

SIHH14N60E-T1-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications like welding.
  • Solar (PV inverters).

SIHH14N60E-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHH14N60E-T1-GE3?

The maximum drain-source voltage is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 16A at 25°C.

What is the typical on-resistance of this MOSFET?

The maximum on-resistance is 255mOhm at 7A and 10V.

What package type is the SIHH14N60E-T1-GE3 in?

It is in an 8-PowerTDFN package, also referred to as PowerPAK 8x8, for surface mounting.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is this MOSFET RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

Home
Account

Categories