SIHG73N60E-GE3 The Vishay Dale SIHG73N60E-GE3 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a 73A continuous drain current.
Mfr Part #:

SIHG73N60E-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHG73N60E-GE3 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a 73A continuous drain current.
✓ Total Stock: 8,609 pcs
$ Price Range: $0.99

SIHG73N60E-GE3 Available from 3 distributors

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SIHG73N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHG73N60E-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHG73N60E-GE3 is an N-Channel Power MOSFET featuring a low figure-of-merit (FOM) and reduced switching losses. It is designed for applications such as switch mode power supplies (SMPS) and power factor correction (PFC) circuits.

 

Key electrical specifications include a 600V drain-source breakdown voltage, a maximum continuous drain current of 73A at 25°C case temperature, and a low on-resistance of 39mOhm at 36A and 10V gate-source voltage. The device also boasts a low input capacitance and ultra-low gate charge.

 

This MOSFET is housed in a TO-247AC package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 520W (Tc).

 

Applications include lighting, industrial uses like welding and induction heating, motor drives, battery chargers, and renewable energy systems such as solar inverters.

SIHG73N60E-GE3 Quick Information

Product Type: N-Channel MOSFET
Series: E Series
Canonical Name: Vishay Dale SiHG73N60E-GE3 N-Channel MOSFET
Subcategory: N-Channel

SIHG73N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHG73N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHG73N60E-GE3 Features

  • 600V drain-source breakdown voltage.
  • 73A continuous drain current.
  • Low 39mOhm on-resistance.
  • TO-247AC package for high power.
  • Suitable for power supply applications.

SIHG73N60E-GE3 Applications

  • High-voltage DC-DC converters.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive circuits.
  • Power factor correction (PFC) stages.
  • Inverter and UPS systems.

SIHG73N60E-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 73A at 25°C case temperature.

What is the on-resistance?

The on-resistance is a maximum of 39mOhm at 36A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package is this MOSFET in?

This MOSFET is in a TO-247-3 package.

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