| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,922 pcs
|
2922 pcs | On Request | 1 | On Request | On Request | 1619+ | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHG73N60E-GE3 is an N-Channel Power MOSFET featuring a low figure-of-merit (FOM) and reduced switching losses. It is designed for applications such as switch mode power supplies (SMPS) and power factor correction (PFC) circuits.
Key electrical specifications include a 600V drain-source breakdown voltage, a maximum continuous drain current of 73A at 25°C case temperature, and a low on-resistance of 39mOhm at 36A and 10V gate-source voltage. The device also boasts a low input capacitance and ultra-low gate charge.
This MOSFET is housed in a TO-247AC package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 520W (Tc).
Applications include lighting, industrial uses like welding and induction heating, motor drives, battery chargers, and renewable energy systems such as solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The maximum continuous drain current is 73A at 25°C case temperature.
The on-resistance is a maximum of 39mOhm at 36A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
This MOSFET is in a TO-247-3 package.