| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Technology |
The SIHG64N65E-GE3 from Vishay Siliconix is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 650V. It is rated for a continuous drain current (Id) of 64A at 25°C and has a maximum on-resistance (Rds On) of 47mOhm at 32A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-247-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V at 250µA, a maximum gate-to-source voltage (Vgs Max) of ±30V, and a maximum power dissipation of 520W (Tc).
Additional specifications include an input capacitance (Ciss) of 7497pF at 100V and a gate charge (Qg) of 369nC at 10V. The device is RoHS compliant, with an MSL rating of 1 Unlimited and REACH unaffected status. Its robust design makes it suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The continuous drain current (Id) at 25°C is 64A.
The maximum on-resistance (Rds On) is 47mOhm at 32A and 10V.
The operating temperature range is -55°C to 150°C.
It is in a TO-247-3 package.
It is mounted using the through-hole method.