| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,760 pcs
|
2760 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay Dale SIHG47N60S-E3 is a Generation One N-Channel Power MOSFET. It is designed with a low figure-of-merit (Rds(on) x Qg) and ultra-low gate charge, making it suitable for demanding applications.
Key electrical specifications include a maximum drain-source voltage (Vds) of 600V and a maximum drain-source on-state resistance (Rds(on)) of 0.07 Ohms at 25°C with a gate-source voltage (Vgs) of 10V. The continuous drain current (Id) is rated at 47A at 25°C case temperature.
This MOSFET is 100% avalanche tested and offers a maximum power dissipation (Pd) of 417W. It operates within a junction temperature range of -55°C to +150°C. The component is housed in a TO-247AC package, suitable for through-hole mounting.
Applications for the SIHG47N60S-E3 include PFC power supply stages, hard switching topologies, solar inverters, UPS systems, motor control, and server telecom power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The typical drain-source on-state resistance is 0.057 Ohms at 24A and 10V gate-source voltage.
The maximum continuous drain current is 47A at 25°C case temperature with 10V gate-source voltage.
The maximum gate charge (Qg) is 216nC.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in a TO-247AC package.
Applications include PFC power supply stages, hard switching topologies, solar inverters, UPS, motor control, and server telecom.