SIHG47N60EF-GE3 The Vishay Dale SIHG47N60EF-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. It features a 600V drain-source voltage and a continuous drain current of 47A.
Mfr Part #:

SIHG47N60EF-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHG47N60EF-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. It features a 600V drain-source voltage and a continuous drain current of 47A.
✓ Total Stock: 4,020 pcs
$ Price Range: $0.99

SIHG47N60EF-GE3 Available from 1 distributor

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✓ Non-Authorised
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4,020 pcs
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SIHG47N60EF-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHG47N60EF-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHG47N60EF-GE3 is an N-Channel Power MOSFET from the EF Series, utilizing Vishay's E series technology for enhanced performance. This device offers a high drain-source voltage rating of 600V and a maximum continuous drain current of 47A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 67mOhm at 24A and 10V gate-source voltage, and an ultra-low gate charge (Qg) of 225 nC. The MOSFET is equipped with a fast body diode, reducing reverse recovery time (trr), charge (Qrr), and peak reverse recovery current (IRRM), contributing to increased robustness and efficiency.

 

Designed for demanding applications, the SIHG47N60EF-GE3 is suitable for telecommunications, industrial power supplies, lighting, and renewable energy systems. It is available in a TO-247AC package, designed for through-hole mounting, and operates across a wide temperature range of -55°C to +150°C.

 

This MOSFET is RoHS and Halogen-free compliant, making it suitable for environmentally conscious designs.

SIHG47N60EF-GE3 Quick Information

Product Type: MOSFET
Series: EF Series
Canonical Name: Vishay Dale SiHG47N60EF-GE3 N-Channel Power MOSFET
Subcategory: Power MOSFET

SIHG47N60EF-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIHG47N60EF-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHG47N60EF-GE3 Features

  • 600V drain-source voltage rating.
  • 47A continuous drain current.
  • Low 67mOhm on-resistance.
  • Ultra-low gate charge (Qg).
  • Fast body diode for improved performance.

SIHG47N60EF-GE3 Applications

  • Ideal for telecom power supplies.
  • Used in industrial battery chargers.
  • Suitable for solar inverters.
  • Applicable in SMPS designs.
  • Supports LLC and ZVS topologies.

SIHG47N60EF-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHG47N60EF-GE3?

The maximum drain-source voltage is 600 V.

What is the maximum continuous drain current of the SIHG47N60EF-GE3?

The maximum continuous drain current is 47A at 25°C case temperature.

What is the typical on-resistance for the SIHG47N60EF-GE3?

The on-resistance is a maximum of 67mOhm at 24A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

Is the SIHG47N60EF-GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What package is the SIHG47N60EF-GE3 supplied in?

It is supplied in a TO-247-3 package.

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