| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Rds On (Typ) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHG47N60AEF-GE3 is a high-performance N-Channel Power MOSFET. It features a maximum drain-source voltage of 600V and a continuous drain current of 40A at 25°C case temperature.
This MOSFET offers a low on-resistance of 70mOhm at 23.5A and 10V gate drive, with a typical Rds(on) of 0.061 Ohm at 25°C. The maximum gate charge is 189 nC at 10V, and the input capacitance is 3576 pF at 100V.
Designed for demanding applications, it has a maximum power dissipation of 313W and operates within a junction temperature range of -55°C to 150°C. The component is housed in a TO-247AC package and is suitable for through-hole mounting.
Key electrical characteristics include a gate-source voltage range of ±30V and a gate threshold voltage of 4V at 250µA. The device is built using MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600 V (minimum, VGS = 0 V, ID = 250 μA).
It is available in a TO-247-3 (TO-247AC) through-hole package.
The operating junction and storage temperature range is -55°C to 150°C.
At case temperature 25°C with VGS at 10V, the maximum continuous drain current is 40 A. At 100°C, it is 25 A.
The maximum Rds(on) is 70 mOhm at a drain current of 23.5 A and VGS of 10 V.
The maximum gate threshold voltage (Vgs(th)) is 4 V at a drain current of 250 μA.
The maximum input capacitance (Ciss) is 3576 pF at VDS = 100 V.