| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
320 pcs
|
320 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIHG33N60EF-GE3 is an EF Series N-Channel Power MOSFET with a fast body diode, utilizing E series technology for reduced switching and conduction losses. It offers a high drain-source voltage rating of 600V and a continuous drain current of 33A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 0.098 Ohms at 16.5A and 10V gate drive, a maximum gate charge of 155 nC, and an input capacitance of 3454 pF. The device is rated for a maximum power dissipation of 278W and operates within a temperature range of -55°C to +150°C.
Packaged in a TO-247AC through-hole configuration, this MOSFET is suitable for various industrial and consumer applications. Its design incorporates features like low figure-of-merit (Ron x Qg) and avalanche energy rating, making it a robust choice for demanding power supply designs.
Applications include telecommunications, lighting, consumer electronics, industrial power supplies, and renewable energy systems such as PV inverters. It is well-suited for topologies like LLC, phase-shifted bridge (ZVS), 3-level inverters, and AC/DC bridges.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650 V, with a minimum of 600 V.
33 A at 25°C case temperature with VGS=10V, and 21 A at 100°C.
-55°C to +150°C.
TO-247-3 with supplier package TO-247AC.
0.098 Ohm at 25°C and VGS=10V.
Maximum gate charge of 155 nC at VGS=10V.
Maximum 691 mJ.