| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHG30N60E-GE3 is an N-Channel Power MOSFET from the E Series, designed for applications requiring low conduction and switching losses. It features a low figure-of-merit (FOM) Ron x Qg and ultra-low gate charge (Qg).
Key electrical specifications include a Drain-Source Voltage (Vdss) of 600V, a maximum continuous drain current of 29A at 25°C case temperature, and a low on-resistance (Rds(on)) of 125mOhm at 15A and 10V Vgs. The device also boasts a high avalanche energy rating (UIS) and a maximum power dissipation of 250W.
This MOSFET is housed in a TO-247AC package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to +150°C (TJ).
Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting systems (HID, fluorescent, LED), industrial applications like welding and motor drives, battery chargers, and renewable energy systems such as solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V minimum.
29A at 25°C case temperature.
125mOhm maximum at VGS=10V, ID=15A.
-55°C to 150°C junction temperature.
TO-247AC (TO-247-3) through-hole package.
130nC maximum at VGS=10V.
250W at 25°C case temperature.