SIHG22N60E-E3 The Vishay Dale SIHG22N60E-E3 is an N-Channel Power MOSFET designed for high-efficiency applications. It offers a 600V drain-source voltage and a 21A continuous drain current.
Mfr Part #:

SIHG22N60E-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHG22N60E-E3 is an N-Channel Power MOSFET designed for high-efficiency applications. It offers a 600V drain-source voltage and a 21A continuous drain current.
✓ Total Stock: 10 pcs
$ Price Range: $0.99

SIHG22N60E-E3 Available from 1 distributor

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SIHG22N60E-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHG22N60E-E3 Description

Short technical summary and product information.

The Vishay Dale SIHG22N60E-E3 is an N-Channel Power MOSFET from the E Series, designed for applications requiring low conduction and switching losses. It features a low figure-of-merit (FOM) Ron x Qg, low input capacitance (Ciss), and ultra-low gate charge (Qg).

 

Key electrical specifications include a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 21A at 25°C case temperature. The on-resistance (Rds(on)) is a maximum of 180mOhm at 11A and 10V gate-source voltage. The maximum gate-source voltage is ±30V, and the gate charge (Qg) is 86 nC at 10V.

 

This MOSFET is rated for a maximum power dissipation of 227W (Tc) and operates within a junction temperature range of -55°C to +150°C. It is housed in a TO-247AC package and utilizes through-hole mounting.

 

Applications for the SIHG22N60E-E3 include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC) power supplies, and industrial applications such as welding, induction heating, motor drives, and battery chargers.

SIHG22N60E-E3 Quick Information

Product Type: N-Channel MOSFET
Series: E Series
Canonical Name: Vishay Dale SiHG22N60E N-Channel 600V 21A TO-247AC Power MOSFET
Subcategory: N-Channel

SIHG22N60E-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHG22N60E-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHG22N60E-E3 Features

  • 600V drain-source breakdown voltage.
  • 21A continuous drain current.
  • 180mOhm maximum on-resistance.
  • Low gate charge (Qg) of 86nC.
  • TO-247AC package for power applications.

SIHG22N60E-E3 Applications

  • Ideal for server power supplies.
  • Used in telecom power supplies.
  • Suitable for SMPS applications.
  • Applicable for PFC circuits.
  • Used in industrial welding.

SIHG22N60E-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHG22N60E-E3?

The maximum drain-source voltage is 600V.

What is the continuous drain current of the SIHG22N60E-E3?

The continuous drain current is 21A at 25°C case temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 180mOhm at 11A drain current and 10V gate-source voltage.

What is the operating temperature range for the SIHG22N60E-E3?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIHG22N60E-E3 supplied in?

The SIHG22N60E-E3 is supplied in a TO-247AC package.

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