| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
259,000 pcs
|
259000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
42,483 pcs
|
42483 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,148 pcs
|
4148 pcs | On Request | 1 | On Request | On Request | 2010+ | On Request | On Request | |
|
3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIHG20N50C-E3 is an N-Channel Power MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 20A at 25°C case temperature. It offers a low on-state resistance of 270mΩ maximum at 10A and 10V gate-source voltage, contributing to efficient power handling.
This MOSFET is designed for high power dissipation, rated at 250W maximum. It features a gate charge of 76nC maximum and a gate-source voltage range of ±30V. The operating junction and storage temperature range is from -55°C to +150°C.
The device is housed in a TO-247-3 package, suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, making it suitable for various power switching and amplification applications.
Key electrical characteristics include an input capacitance of 2942pF maximum and a forward transconductance of 6.4S minimum. The device is also avalanche tested, indicating robustness in demanding conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500V minimum.
20A at case temperature 25°C, derated to 11A at 100°C.
270mΩ maximum at 10A drain current and 10V gate-source voltage.
TO-247AC (TO-247-3) through-hole package.
-55°C to 150°C junction and storage temperature.
76 nC maximum at 10V gate drive.
0.5 °C/W typical.