| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHG11N80AE-GE3 is an N-Channel Power MOSFET designed for high-performance applications. It features a low figure-of-merit (Ron x Qg) and low effective capacitance, contributing to reduced switching and conduction losses.
Key electrical specifications include a drain-source breakdown voltage of 800V and a continuous drain current of 8A at 25°C case temperature. The gate charge (Qg) is a maximum of 42 nC at 10V, and the on-resistance (Rds On) is a maximum of 450 mOhm at 5.5A and 10V. The device has a maximum power dissipation of 78W.
This MOSFET is housed in a TO-247AC package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C.
Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), and various industrial applications such as welding, induction heating, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800 V minimum at VGS = 0 V and ID = 250 μA.
TO-247-3 (TO-247AC) through-hole package.
-55°C to +150°C junction temperature.
42 nC maximum at VGS = 10 V.
450 mOhm maximum at ID = 5.5 A and VGS = 10 V.
8 A at case temperature 25°C.
78 W at case temperature 25°C.