SIHG100N60E-GE3 The Vishay Siliconix SIHG100N60E-GE3 is a 600V N-Channel Power MOSFET designed for high-efficiency applications. It features a TO-247AC package and low conduction losses.
Mfr Part #:

SIHG100N60E-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SIHG100N60E-GE3 is a 600V N-Channel Power MOSFET designed for high-efficiency applications. It features a TO-247AC package and low conduction losses.
✓ Total Stock: 18,520 pcs
$ Price Range: $0.99

SIHG100N60E-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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18,520 pcs
18520 pcs On Request 1 On Request On Request On Request On Request On Request

SIHG100N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHG100N60E-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SIHG100N60E-GE3 is an N-Channel Power MOSFET from the 4th generation E series technology. It offers a drain-source breakdown voltage of 600V and a continuous drain current of 30A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance of 100mOhm at 13A and 10V Vgs, contributing to reduced switching and conduction losses. Its low figure-of-merit (FOM) Ron x Qg and low effective capacitance (Co(er)) make it suitable for demanding applications.

 

The device is rated for a maximum power dissipation of 208W and operates within a junction temperature range of -55°C to +150°C. It comes in a TO-247AC package, suitable for through-hole mounting.

 

Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial uses such as welding, induction heating, motor drives, battery chargers, and solar inverters.

SIHG100N60E-GE3 Quick Information

Product Type: N-Channel MOSFET
Series: E Series
Canonical Name: Vishay Siliconix SIHG100N60E-GE3 N-Channel Power MOSFET
Subcategory: N-Channel

SIHG100N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIHG100N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHG100N60E-GE3 Features

  • 600V drain-source breakdown voltage.
  • 30A continuous drain current.
  • 100mOhm maximum on-resistance.
  • TO-247AC package for through-hole mounting.
  • 4th generation E series technology.

SIHG100N60E-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications like welding.
  • Solar (PV inverters).

SIHG100N60E-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHG100N60E-GE3?

The maximum drain-source voltage (Vds) is 600V.

What is the continuous drain current rating?

The continuous drain current is 30A at 25°C case temperature and 19A at 100°C case temperature.

What is the typical on-resistance of this MOSFET?

The typical on-resistance is 0.086 Ohm at 25°C with a gate-source voltage of 10V.

What package type is the SIHG100N60E-GE3 supplied in?

It is supplied in a TO-247AC package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

Is this MOSFET lead-free and halogen-free?

Yes, the part is lead (Pb)-free and halogen-free.

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