| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiHG039N60E-GE3 is a 600V N-Channel Power MOSFET from the 4th generation E series technology. It offers a low figure-of-merit (FOM) for reduced switching and conduction losses, making it suitable for demanding applications.
Key electrical specifications include a maximum drain-source voltage of 600V, a continuous drain current of 63A at 25°C case temperature, and a maximum on-resistance of 39mOhm at 32A and 10V gate drive. The gate charge is rated at 126 nC maximum at 10V.
This MOSFET is designed for applications such as server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial uses including welding, motor drives, battery chargers, and solar inverters. It is avalanche energy rated (UIS).
The device is housed in a TO-247AC package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C and is RoHS compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SIHG039N60E-GE3 is 600V.
The SIHG039N60E-GE3 has a continuous drain current rating of 63A at a case temperature of 25°C.
The typical on-resistance (Rds On) for the SIHG039N60E-GE3 is 39mOhm when measured at 32A drain current and 10V gate-source voltage.
The operating junction and storage temperature range for the SIHG039N60E-GE3 is -55°C to +150°C.
Yes, the SIHG039N60E-GE3 is RoHS3 compliant.
The SIHG039N60E-GE3 is supplied in a TO-247AC package.