Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	1.8A (Tc)
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	7Ohm @ 1.1A, 10V
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

SIHFR9310-GE3

SIHFR9310-GE3 Specifications Quick View