SIHFR9220-GE3 The Vishay Dale SIHFR9220-GE3 is a P-Channel MOSFET designed for surface mounting. It offers a 200V drain-source voltage and a continuous drain current of 3.6A.
Mfr Part #:

SIHFR9220-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHFR9220-GE3 is a P-Channel MOSFET designed for surface mounting. It offers a 200V drain-source voltage and a continuous drain current of 3.6A.
✓ Total Stock: 2,999 pcs
$ Price Range: $0.99

SIHFR9220-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,999 pcs
2999 pcs On Request 1 On Request On Request On Request On Request On Request

SIHFR9220-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHFR9220-GE3 Description

Short technical summary and product information.

The SIHFR9220-GE3 from Vishay Dale is a P-Channel MOSFET utilizing Metal Oxide technology. It is designed for surface-mount applications and comes in a TO-252-3, DPak package.

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 200V and a maximum continuous drain current (Id) of 3.6A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 1.5 Ohms at 2.2A and 10V gate-source voltage. The gate-source voltage has a maximum rating of ±20V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.

 

This MOSFET has a maximum power dissipation of 42W when the case temperature is 25°C, and 2.5W when the ambient temperature is 25°C. It operates within a junction temperature range of -55°C to 150°C. The input capacitance (Ciss) is 340 pF at 25V, and the gate charge (Qg) is 20 nC at 10V.

 

The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SIHFR9220-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SIHFR9220-GE3 P-Channel MOSFET
Subcategory: P-Channel

SIHFR9220-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHFR9220-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHFR9220-GE3 Features

  • P-Channel MOSFET technology.
  • 200V maximum drain-source voltage.
  • 3.6A continuous drain current.
  • 1.5 Ohm maximum on-resistance.
  • TO-252 surface mount package.

SIHFR9220-GE3 Applications

  • High-voltage DC-DC converters
  • Power supply inversion circuits
  • Motor drive bridge topologies
  • Battery protection circuits in portable devices
  • Switching power management in industrial systems

SIHFR9220-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHFR9220-GE3?

The maximum drain-source voltage is 200V.

What is the continuous drain current rating for the SIHFR9220-GE3?

The continuous drain current is 3.6A at 25°C case temperature.

What is the maximum on-resistance of the SIHFR9220-GE3?

The maximum on-resistance is 1.5 Ohms when tested at 2.2A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package type is the SIHFR9220-GE3 supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the SIHFR9220-GE3 RoHS compliant?

Yes, the SIHFR9220-GE3 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the SIHFR9220-GE3?

The Moisture Sensitivity Level is 1.

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