| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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352 pcs
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352 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIHFR220-GE3 from Vishay Dale is a third-generation power MOSFET designed for surface-mount applications. It offers a robust combination of fast switching speeds, low on-resistance, and cost-effectiveness.
Key electrical specifications include a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 4.8A at 25°C case temperature. The on-resistance (Rds(on)) is rated at a maximum of 800mOhm at 2.9A and 10V gate-source voltage. Input capacitance (Ciss) is 260pF at 25V, and gate charge (Qg) is 14nC at 10V.
This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is classified as an N-Channel MOSFET with Metal Oxide technology.
Environmental compliance includes RoHS3 compliance and an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
4.8A at Tc=25°C.
800mOhm maximum at 2.9A, 10V.
The device is packaged in DPak (TO-252-3) surface mount package (supplier device package TO-252AA).
-55°C to 150°C junction temperature.
4V at 250µA drain current.
Maximum power dissipation is 42W at case temperature 25°C and 2.5W at ambient temperature 25°C.