| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
241,067 pcs
|
241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHFL9110TR-GE3 is a P-Channel MOSFET designed for surface-mount applications. It offers a drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 1.1A at 25°C (Tc). The device has a maximum on-resistance (Rds On) of 1.2 Ohms at 660mA and 10V gate-source voltage.
This MOSFET is housed in a SOT-223 package, suitable for automated pick-and-place assembly and wave soldering techniques. Its operating temperature range is -55°C to 150°C (TJ). The maximum power dissipation is rated at 2W (Ta) and 3.1W (Tc).
Key electrical parameters include a gate charge (Qg) of 8.7 nC at 10V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 200 pF at 25V. The device is designed for fast switching and ease of paralleling, making it suitable for various power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
1.1A at 25°C case temperature
1.2 Ohm maximum at 660mA and 10V gate drive
-55°C to 150°C junction temperature
TO-261-4 (SOT-223) surface-mount package
4V maximum at 250µA drain current
8.7 nC maximum at 10V gate-source voltage