| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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49 pcs
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49 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SIHF9630STRL-GE3 is a P-Channel MOSFET designed for surface-mount applications. It offers a maximum drain-source voltage of 200V and a continuous drain current of up to 6.5A at 25°C case temperature.
The MOSFET features a low on-resistance of 800mOhm at 3.9A and 10V gate-source voltage, along with a gate charge of 29nC at 10V. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 74W at 25°C case temperature.
The device is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It is also available in tape and reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -200V.
The continuous drain current is -6.5A at case temperature 25°C and -4.0A at 100°C.
The maximum on-resistance is 800mOhm at a gate-source voltage of 10V and drain current of 3.9A.
It is available in a TO-263-3 (D²Pak) surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The maximum gate charge is 29nC at a gate-source voltage of 10V.
The maximum input capacitance is 700pF at a drain-source voltage of 25V.