| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,020 pcs
|
32020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHF7N60E-E3 is an N-Channel MOSFET from the E Series, designed for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and lighting.
Key electrical specifications include a maximum drain-source voltage of 600V and a continuous drain current of 7A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 600mOhm at 3.5A and 10V gate-source voltage. It features a low input capacitance and ultra-low gate charge, contributing to reduced switching and conduction losses.
This MOSFET is rated for a maximum power dissipation of 31W and operates within a temperature range of -55°C to 150°C. The device is housed in a TO-220 Full Pack package and is suitable for through-hole mounting.
Applications include power factor correction, industrial welding, induction heating, motor drives, battery chargers, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 7A at a case temperature of 25°C.
The maximum Rds On is 600mOhm at 3.5A and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The SIHF7N60E-E3 is supplied in a TO-220 Full Pack package.