| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,050 pcs
|
2050 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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The Vishay Dale SIHF6N65E-GE3 is an N-Channel Power MOSFET designed for various applications including server and telecom power supplies, switch mode power supplies (SMPS), and industrial uses. It features a high drain-source voltage rating of 650V and a continuous drain current of 7A at 25°C case temperature.
Key electrical characteristics include a maximum Rds On of 600mOhm at 3A and 10V, a gate charge (Qg) of 48nC maximum at 10V, and an input capacitance (Ciss) of 820pF maximum at 100V. The device operates over a wide temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a TO-220 Full Pack package, suitable for through-hole mounting. Its design emphasizes low figure-of-merit (FOM) Ron x Qg, reduced switching and conduction losses, and avalanche energy rating (UIS).
Applications for the SIHF6N65E-GE3 include power factor correction power supplies (PFC), lighting systems like high-intensity discharge (HID) and fluorescent ballast lighting, and industrial applications such as welding, induction heating, motor drives, battery chargers, and renewable energy systems like solar (PV inverters).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V minimum.
TO-220-3 Full Pack (through-hole).
-55°C to 150°C junction temperature.
7A at 25°C case temperature.
600mOhm maximum at 3A and 10V gate-source voltage.
4V maximum at 250µA drain current.
31W at 25°C case temperature.