| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
740 pcs
|
740 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHF530STRL-GE3 is a third-generation power MOSFET featuring an N-Channel configuration. It is designed for surface-mount applications and comes in a D2PAK (TO-263) package.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 14A at 25°C case temperature. The on-resistance (Rds On) is specified as a maximum of 160mOhm at 10V gate-source voltage and 8.4A drain current. The gate charge (Qg) is a maximum of 26nC at 10V.
This MOSFET operates within a temperature range of -55°C to 175°C. It has a maximum power dissipation of 88W when the case temperature is 25°C and 3.7W when the ambient temperature is 25°C (PCB mount). The input capacitance (Ciss) is 670pF at 25V, and the gate-source threshold voltage (Vgs(th)) is 4V at 250µA.
The device is suitable for high current applications due to its low internal connection resistance. It is available in tape and reel packaging, making it compatible with automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (surface mount D2PAK).
-55°C to 175°C (junction).
14A at case temperature 25°C.
Maximum 160 milliohms at Vgs=10V and Id=8.4A.
26 nC at Vgs=10V.