| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SiHD7N60E-GE3 is an N-Channel Power MOSFET from the E Series, designed for applications requiring low figure-of-merit (FOM) and reduced switching losses. This device offers a drain-source voltage (Vds) of 600V and a continuous drain current of 7A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 600mOhm at 3.5A and 10V gate-source voltage, and a maximum gate charge (Qg) of 40nC at 10V. The input capacitance (Ciss) is 680pF at 100V.
This MOSFET is rated for a maximum power dissipation of 78W (Tc) and operates within a junction temperature range of -55°C to +150°C. It is housed in a DPAK (TO-252) surface-mount package, suitable for various industrial and power supply applications.
Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, welding, induction heating, motor drives, battery chargers, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 600V at VGS=0V, ID=250μA.
The maximum continuous drain current is 7A at case temperature 25°C and 5A at 100°C.
The maximum on-resistance is 600mOhm at a drain current of 3.5A and gate-source voltage of 10V.
The maximum gate threshold voltage is 4V at a drain current of 250μA.
The operating junction temperature range is -55°C to 150°C.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63, surface mount.
Yes, the datasheet indicates the part is lead-free and halogen-free.