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SIHD7N60E-E3 The Siliconix SIHD7N60E-E3 is an N-Channel MOSFET designed for power applications. It features a 500V drain-to-source voltage and 40A continuous drain current.
Mfr Part #:

SIHD7N60E-E3

Available from 1 distributors
Mfr Name: Siliconix
Siliconix
The Siliconix SIHD7N60E-E3 is an N-Channel MOSFET designed for power applications. It features a 500V drain-to-source voltage and 40A continuous drain current.
✓ Total Stock: 75 pcs
$ Price Range: $2.60

SIHD7N60E-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
75 pcs
On Request
75 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SIHD7N60E-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SIHD7N60E-E3 Description

Short technical summary and product information.

The Siliconix SIHD7N60E-E3 is a high-performance N-Channel MOSFET. It is designed for robust power switching applications, offering a drain-to-source voltage of 500V and a continuous drain current of 40A at 25°C.

 

This MOSFET utilizes Metal Oxide technology and is housed in a SOT-227 package, suitable for chassis mounting. The drive voltage is specified at 10V, with a maximum on-resistance of 130mOhm at 23A and 10V gate-source voltage.

 

Key electrical characteristics include a 500V Vdss rating and a 40A Id rating. The component is designed for efficient power conversion and management in various electronic systems.

SIHD7N60E-E3 Quick Information

Product Type: N-Channel MOSFET
Series: SIHD7N60E
Canonical Name: Siliconix SIHD7N60E-E3 N-Channel MOSFET
Subcategory: N-Channel

SIHD7N60E-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIHD7N60E-E3 Estimated Pricing

Qty Low High
1+ $2.60 $2.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHD7N60E-E3 Features

  • 500V drain-to-source voltage rating.
  • 40A continuous drain current capability.
  • Low on-resistance of 130mOhm.
  • Chassis mount SOT-227 package.
  • N-Channel MOSFET technology.

SIHD7N60E-E3 Applications

  • Suitable for power switching applications.
  • Used in power management circuits.
  • Ideal for high-current applications.
  • Designed for robust power conversion.

SIHD7N60E-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SIHD7N60E-E3?

The drain-to-source voltage rating is 500V.

What is the continuous drain current rating of the SIHD7N60E-E3?

The continuous drain current is 40A at 25°C case temperature.

What is the maximum on-resistance of the SIHD7N60E-E3?

The maximum on-resistance is 130mOhm at 23A drain current and 10V gate drive.

What is the package type of the SIHD7N60E-E3?

The device is packaged in a SOT-227 case.

What is the mounting type of the SIHD7N60E-E3?

The device is designed for chassis mount.

What gate drive voltage is required for the SIHD7N60E-E3?

The drive voltage required is 10V for maximum on-resistance performance.

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