| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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226,000 pcs
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226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHD5N50D-GE3 is a D Series N-Channel Power MOSFET. It features an optimal design with low on-resistance and reduced capacitive switching losses. The device has a maximum drain-source voltage of 500V and a continuous drain current rating of 5.3A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 1.5 Ohm at 2.5A and 10V gate-source voltage, and a gate charge of 20 nC at 10V. The MOSFET operates over a temperature range of -55°C to +150°C.
This component is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. Its applications include consumer electronics, server and telecom power supplies, SMPS, industrial uses like welding and motor drives, and battery chargers.
The SIHD5N50D-GE3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V.
TO-252-3, DPak (2 Leads + Tab), SC-63 (surface mount).
-55°C to 150°C (junction).
5.3 A at Tc = 25°C with Vgs = 10V.
1.5 Ohm at Id = 2.5A and Vgs = 10V.
20 nC maximum at Vgs = 10V.
325 pF maximum at Vds = 100V.