| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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448 pcs
|
448 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
448 pcs
|
448 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHD2N80AE-GE3 is an N-Channel Power MOSFET with a maximum drain-source voltage of 800V and a continuous drain current of 2.9A at 25°C. It offers a low on-resistance of 2.9 Ohms at 500mA and 10V, contributing to reduced switching and conduction losses.
This MOSFET utilizes advanced technology for a low figure-of-merit (FOM) and ultra-low gate charge. It is rated for a maximum power dissipation of 62.5W and operates within a junction temperature range of -55°C to +150°C. The device includes integrated Zener diode ESD protection.
Packaged in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63, the SIHD2N80AE-GE3 is suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), and lighting systems like high-intensity discharge (HID) and fluorescent ballast lighting. It is also used in industrial applications including welding, induction heating, motor drives, battery chargers, and renewable energy systems like solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The continuous drain current is 2.9A at 25°C.
The typical on-resistance is 2.5 Ohms at 25°C and 10V.
The operating temperature range is -55°C to 150°C.
It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.