| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHD180N60E-GE3 is a single N-Channel Power MOSFET from the E Series technology. It features a high drain-source breakdown voltage of 600V and a continuous drain current rating of 19A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 195mOhm at 9.5A and 10V gate-source voltage, and a gate charge of 32nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is designed for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC). It is available in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The device is rated for avalanche energy and offers reduced switching and conduction losses due to its 4th generation E series technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 19A at 25°C case temperature.
The maximum on-resistance is 195mOhm at 9.5A and 10V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.