| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHD14N60E-GE3 is a single N-Channel Power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current of 13A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 309mOhm at 7A and 10V, and a gate charge (Qg) of 64nC at 10V. The device also offers a low input capacitance and is avalanche energy rated.
This MOSFET is suitable for various power supply applications, including server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) circuits. It is also used in lighting applications like high-intensity discharge (HID) and fluorescent ballast lighting, as well as industrial uses such as welding and induction heating.
The component is packaged in a surface-mount DPAK (TO-252) package, offering efficient thermal performance with a maximum power dissipation of 147W at 25°C case temperature. The operating temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
It is available in a surface-mount DPAK (TO-252AA) package.
-55°C to 150°C.
13A at 25°C case temperature, and 8A at 100°C.
The maximum on-resistance is 309 mOhm at 7A and 10V, with a typical value of 269 mOhm at 10V.
The maximum gate charge is 64 nC at 10V.
The single pulse avalanche energy is 136 mJ.