| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,020 pcs
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16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHD12N50E-GE3 is an N-Channel Power MOSFET designed for various applications including computing, lighting, and switch mode power supplies (SMPS). It offers a low figure-of-merit (Ron x Qg), low input capacitance, and reduced switching and conduction losses.
Key electrical specifications include a drain-source breakdown voltage of 550V, a maximum continuous drain current of 10.5A at 25°C case temperature, and a maximum on-resistance of 380mOhm at 6A and 10V gate-source voltage. The device also features a low gate charge (Qg max. 50 nC) and is avalanche energy rated (UIS).
This MOSFET is housed in a DPAK (TO-252) surface-mount package, suitable for applications requiring efficient power handling. The operating junction and storage temperature range is -55°C to +150°C. Its design focuses on reduced switching and conduction losses, making it suitable for hard-switched topologies like power factor correction (PFC) and flyback converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V minimum.
10.5 A at Tc=25°C.
380 mOhm maximum at 6A, 10V.
-55°C to +150°C.
D-Pak (TO-252) surface mount.
4 V maximum at 250µA.
114 W at Tc=25°C.