| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18,020 pcs
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18020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHB35N60EF-GE3 is an N-Channel Power MOSFET designed for high-performance applications. It offers a 600V drain-source breakdown voltage and a continuous drain current rating of 32A at 25°C case temperature.
Key electrical characteristics include a maximum Rds On of 97mOhm at 17A and 10V gate-source voltage, and a gate charge of 134 nC maximum. The MOSFET operates within a temperature range of -55°C to 150°C.
This device is suitable for various applications including server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial uses like welding and induction heating. It is packaged in a TO-263AB (D²Pak) surface-mount package.
The MOSFET utilizes advanced technology for reduced switching and conduction losses, low input capacitance, and an avalanche energy rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600 V.
The continuous drain current is 32A at 25°C case temperature.
The Rds On is a maximum of 97mOhm at 17A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
It is a surface mount device.