SIHB35N60EF-GE3 The Vishay Dale SIHB35N60EF-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 32A continuous drain current. It features a low 97mOhm Rds On at 17A, 10V and is housed in a surface-mount D2PAK package.
Mfr Part #:

SIHB35N60EF-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHB35N60EF-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 32A continuous drain current. It features a low 97mOhm Rds On at 17A, 10V and is housed in a surface-mount D2PAK package.
✓ Total Stock: 18,020 pcs
$ Price Range: $0.99

SIHB35N60EF-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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18,020 pcs
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SIHB35N60EF-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHB35N60EF-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHB35N60EF-GE3 is an N-Channel Power MOSFET designed for high-performance applications. It offers a 600V drain-source breakdown voltage and a continuous drain current rating of 32A at 25°C case temperature.

 

Key electrical characteristics include a maximum Rds On of 97mOhm at 17A and 10V gate-source voltage, and a gate charge of 134 nC maximum. The MOSFET operates within a temperature range of -55°C to 150°C.

 

This device is suitable for various applications including server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial uses like welding and induction heating. It is packaged in a TO-263AB (D²Pak) surface-mount package.

 

The MOSFET utilizes advanced technology for reduced switching and conduction losses, low input capacitance, and an avalanche energy rating.

SIHB35N60EF-GE3 Quick Information

Product Type: MOSFET
Series: EF Series
Canonical Name: Vishay Dale SIHB35N60EF-GE3 N-Channel MOSFET
Subcategory: N-Channel

SIHB35N60EF-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHB35N60EF-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHB35N60EF-GE3 Features

  • 600V drain-source voltage rating.
  • 32A continuous drain current.
  • Low 97mOhm Rds On.
  • Surface mount D2PAK package.
  • Suitable for high power applications.

SIHB35N60EF-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications.
  • Solar (PV inverters).

SIHB35N60EF-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHB35N60EF-GE3?

The maximum drain-source voltage is 600 V.

What is the continuous drain current rating?

The continuous drain current is 32A at 25°C case temperature.

What is the typical on-resistance (Rds On) of this MOSFET?

The Rds On is a maximum of 97mOhm at 17A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIHB35N60EF-GE3 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is this MOSFET mounted?

It is a surface mount device.

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