| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
2,620 pcs
|
2620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHB33N60ET1-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. It offers a robust 600V drain-source voltage and a continuous drain current capability of 33A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance (Rds(on)) of 99mOhm at 16.5A and 10V gate drive, contributing to reduced conduction losses. The device also features a low input capacitance (Ciss) of 3508 pF and an ultra-low gate charge (Qg) of 150 nC, which minimizes switching losses and improves overall efficiency.
This MOSFET is rated for a maximum power dissipation of 278W and operates across a wide temperature range of -55°C to 150°C. It is housed in a surface-mount TO-263AB (D²Pak) package, suitable for automated assembly processes.
Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, welding, induction heating, motor drives, battery chargers, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600 V.
The continuous drain current rating is 33A at 25°C case temperature.
The maximum on-resistance is 99mOhm when the gate-source voltage is 10V and the drain current is 16.5A.
The operating junction and storage temperature range is -55°C to 150°C.
The SIHB33N60ET1-GE3 is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.