Mfr Part #:

SIHB33N60ET1-GE3

Name: SIHB33N60ET1-GE3
Brand: Vishay
SKU: SIHB33N60ET1-GE3
Availability: InStock

Mfr Name: Vishay

Description:

MOSFET N-CH 600V 33A TO263

✓ Total Stock: 21,000 pcs

SIHB33N60ET1-GE3 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Risen Electronics ✓ Non-Authorised Inventory information	20,000 pcs On Request	20000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16

Short technical summary and product information.

MOSFET N-CH 600V 33A TO263

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

SIHB33N60E-GE3

Vishay

MOSFET N-CH 600V 33A D2PAK

Vishay

MOSFET N-CH 600V 33A TO263

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	33A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3508 pF @ 100 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	278W (Tc)
Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA