| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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The Vishay Dale SIHB33N60EF-GE3 is an N-Channel Power MOSFET from the EF Series, utilizing fast body diode technology for reduced switching losses. It offers a high drain-source voltage rating of 600V and a continuous drain current of 33A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 98mOhm at 16.5A and 10V gate-source voltage, and an ultra-low gate charge (Qg) of 155nC at 10V. The MOSFET also features a low input capacitance (Ciss) of 3454pF at 100V and is avalanche energy rated (UIS).
This device is suitable for various applications including telecommunications, lighting, consumer electronics, industrial power supplies, and renewable energy systems like solar inverters. It is designed for switch-mode power supplies (SMPS) and topologies such as LLC and phase-shifted bridge (ZVS).
The SIHB33N60EF-GE3 comes in a surface-mount D2PAK (TO-263) package, rated for an operating temperature range of -55°C to +150°C. It is manufactured to be lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
The maximum continuous drain current is 33A at 25°C case temperature.
The maximum on-resistance is 98mOhm at 16.5A drain current and 10V gate-source voltage.
It is available in a TO-263-3 (D2PAK) surface mount package.
The junction temperature range is -55°C to 150°C.
Yes, it features a fast body diode using E series technology.
Yes, it is avalanche energy rated for unclamped inductive switching (UIS).