SIHB33N60E-GE3 The Vishay Dale SIHB33N60E-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 33A continuous current rating. It comes in a D2PAK surface mount package.
Mfr Part #:

SIHB33N60E-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHB33N60E-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 33A continuous current rating. It comes in a D2PAK surface mount package.
✓ Total Stock: 547 pcs
$ Price Range: $0.99

SIHB33N60E-GE3 Available from 1 distributor

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SIHB33N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHB33N60E-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHB33N60E-GE3 is an N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current of 33A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 99mOhm at 16.5A and 10V gate-source voltage, contributing to reduced conduction losses. The input capacitance (Ciss) is 3508 pF at 100V, and the gate charge (Qg) is a maximum of 150 nC at 10V, indicating efficient switching characteristics.

 

With a maximum power dissipation of 278W and an operating temperature range of -55°C to 150°C, the SIHB33N60E-GE3 is suitable for demanding environments. It is housed in a D2PAK (TO-263) surface mount package, facilitating integration into compact designs.

 

Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, welding, induction heating, motor drives, battery chargers, and renewable energy systems like solar PV inverters.

SIHB33N60E-GE3 Quick Information

Product Type: MOSFET
Series: E Series
Canonical Name: Vishay Dale SIHB33N60E-GE3 N-Channel MOSFET
Subcategory: N-Channel

SIHB33N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHB33N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHB33N60E-GE3 Features

  • 600V drain-source voltage rating.
  • 33A continuous drain current.
  • 99mOhm maximum on-resistance.
  • 150 nC maximum gate charge.
  • D2PAK surface mount package.

SIHB33N60E-GE3 Applications

  • Used in server power supplies.
  • Suitable for telecom power supplies.
  • Applied in switch mode power supplies.
  • Features in power factor correction.
  • Incorporated in solar PV inverters.

SIHB33N60E-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHB33N60E-GE3?

The maximum drain-source voltage is 600 V.

What is the continuous drain current of the SIHB33N60E-GE3?

The continuous drain current is 33A at 25°C case temperature.

What is the on-resistance of the SIHB33N60E-GE3?

The maximum on-resistance is 99mOhm at 16.5A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIHB33N60E-GE3 available in?

It is available in a D2PAK (TO-263) surface mount package.

Is the SIHB33N60E-GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SIHB33N60E-GE3?

The Moisture Sensitivity Level is 1.

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