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SIHB24N80AE-GE3 The Vishay SIHB24N80AE-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. It features an 800V drain-source voltage and a 21A continuous drain current.
Mfr Part #:

SIHB24N80AE-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SIHB24N80AE-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. It features an 800V drain-source voltage and a 21A continuous drain current.
✓ Total Stock: 208,700 pcs
$ Price Range: $0.99

SIHB24N80AE-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
207,700 pcs
On Request
207700 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SIHB24N80AE-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SIHB24N80AE-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SiHB24N80AE is an N-Channel Power MOSFET designed for demanding applications such as server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) circuits. It offers a low figure-of-merit (FOM) Ron x Qg, reduced switching and conduction losses, and is avalanche energy rated (UIS).

 

Key electrical specifications include a maximum drain-source voltage of 800V and a continuous drain current of 21A at 25°C case temperature. The Rds(on) is typically 0.160 Ohms at 10A and 10V gate-source voltage. The device features a maximum power dissipation of 208W and operates over a junction temperature range of -55°C to +150°C.

 

Packaged in a surface-mount D2PAK (TO-263) package, this MOSFET is suitable for various industrial applications including welding, induction heating, motor drives, battery chargers, and solar inverters. Its low effective capacitance and reduced losses contribute to improved system efficiency.

SIHB24N80AE-GE3 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Vishay Siliconix SiHB24N80AE N-Channel Power MOSFET
Subcategory: N-Channel

SIHB24N80AE-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHB24N80AE-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHB24N80AE-GE3 Features

  • 800V drain-source breakdown voltage.
  • 21A continuous drain current.
  • Low Rds(on) at 10A, 10V.
  • 208W maximum power dissipation.
  • Surface mount D2PAK package.

SIHB24N80AE-GE3 Applications

  • Ideal for server power supplies.
  • Used in telecom power systems.
  • Suitable for switch mode power supplies.
  • Applicable to power factor correction.
  • Designed for industrial applications.

SIHB24N80AE-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

800V.

What is the package type?

TO-263-3 (D²Pak) surface-mount package.

What is the operating junction temperature range?

-55°C to 150°C.

What is the maximum on-resistance?

184mOhm at ID=10A, VGS=10V.

What is the typical gate charge?

89nC at VGS=10V.

What is the continuous drain current rating?

21A at case temperature 25°C.

What is the single pulse avalanche energy rating?

127mJ.

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