| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
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The Vishay Dale SIHB24N65EFT1-GE3 is an N-Channel Power MOSFET from the E Series technology, designed for high-performance applications. It offers a maximum drain-source voltage of 650V and a continuous drain current of 24A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 156mOhm at 12A and 10V gate drive, and a maximum gate charge of 122nC. The MOSFET also features a fast body diode, reduced switching losses, and avalanche energy rating.
This device is housed in a TO-263 (D²Pak) surface mount package, making it suitable for various power supply and industrial applications. The operating temperature range is -55°C to 150°C.
Applications include telecommunications, lighting, consumer and computing power supplies, industrial equipment like welders and battery chargers, and renewable energy systems such as solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650 V.
The continuous drain current is 24 A at 25°C case temperature.
The maximum on-resistance is 156 mOhm at 12A drain current and 10V gate-source voltage.
The maximum gate charge is 122 nC at 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The device is supplied in a TO-263 (D²Pak) surface mount package.