| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,220 pcs
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4220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix SIHB22N60ET1-GE3 is an N-Channel Power MOSFET designed for various power applications. It features a high drain-source voltage rating of 600V and a continuous drain current capability of 21A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 180mOhm at 11A and 10V gate-source voltage, and a maximum gate charge of 86nC at 10V. The input capacitance is rated at 1920pF at 100V.
This MOSFET operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 227W. It is packaged in a TO-263 surface-mount package, suitable for various industrial and telecom power supply applications.
Applications include server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) circuits. Its low figure-of-merit (FOM) contributes to reduced switching and conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
It is available in a surface mount D²PAK (TO-263) package.
-55°C to 150°C.
21A at 25°C case temperature, 13A at 100°C.
Maximum 180mOhm at Vgs=10V, Id=11A.
Maximum 86nC at Vgs=10V.
Maximum 1920pF at Vds=100V.