| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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26,920 pcs
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26920 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIHB16N50C-E3 is a single N-Channel Power MOSFET from Vishay Siliconix. It is designed for applications requiring high voltage and current handling capabilities. The device offers a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 16A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 380mOhm at 8A and 10V gate-source voltage, and a gate charge (Qg) of 68nC at 10V. The gate threshold voltage (Vgs(th)) is specified between 3V and 5V at 250µA.
This MOSFET is housed in a surface-mount D2PAK (TO-263) package, making it suitable for integration into various electronic circuits. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 250W (Tc).
The device is 100% avalanche tested, indicating robust performance under avalanche conditions. Its low figure-of-merit (Ron x Qg) contributes to efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SIHB16N50C-E3 is 500V.
The continuous drain current (Id) for the SIHB16N50C-E3 is 16A at a case temperature of 25°C.
The maximum Rds(on) is 380mOhm when the drain current is 8A and the gate-source voltage is 10V. The typical Rds(on) is 0.38 Ohm at Vgs = 10V.
The operating junction and storage temperature range (TJ, Tstg) is from -55°C to +150°C.
The SIHB16N50C-E3 is available in a Surface Mount D2PAK (TO-263) package.
Yes, the SIHB16N50C-E3 is RoHS3 Compliant.
The maximum gate charge (Qg) is 68 nC at a gate-source voltage of 10V.