SIHB15N60E-GE3 The Vishay SIHB15N60E-GE3 is an N-Channel Power MOSFET designed for high-efficiency applications. It offers a 600V drain-source voltage and a 15A continuous drain current.
Mfr Part #:

SIHB15N60E-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SIHB15N60E-GE3 is an N-Channel Power MOSFET designed for high-efficiency applications. It offers a 600V drain-source voltage and a 15A continuous drain current.
✓ Total Stock: 238 pcs
$ Price Range: $0.99

SIHB15N60E-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
238 pcs
238 pcs On Request 1 On Request On Request 12+ On Request On Request

SIHB15N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHB15N60E-GE3 Description

Short technical summary and product information.

The Vishay SIHB15N60E-GE3 is an N-Channel Power MOSFET from Vishay's E Series, designed for applications requiring efficient power switching. This device features a maximum drain-source voltage of 600V and a continuous drain current rating of 15A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-state resistance (Rds On) of 0.28Ω at 8A and 10V gate-source voltage, and a maximum gate charge (Qg) of 78nC at 10V. The MOSFET operates within a junction temperature range of -55°C to +150°C.

 

Designed for surface mounting, the SIHB15N60E-GE3 comes in a TO-263-3, D²Pak package. Its features, such as low figure-of-merit and reduced switching losses, make it suitable for various industrial and power supply applications.

 

Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), and industrial applications like welding and induction heating.

SIHB15N60E-GE3 Quick Information

Product Type: N-Channel Power MOSFET
Series: E Series
Canonical Name: Vishay SIHB15N60E-GE3 N-Channel Power MOSFET
Subcategory: Power MOSFET

SIHB15N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIHB15N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHB15N60E-GE3 Features

  • 600V drain-source voltage rating.
  • 15A continuous drain current.
  • 0.28Ω maximum Rds On.
  • 78nC maximum gate charge.
  • TO-263 surface mount package.

SIHB15N60E-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications.
  • Solar (PV inverters).

SIHB15N60E-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHB15N60E-GE3?

The maximum drain-source voltage is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 15A at 25°C case temperature.

What is the Rds On (Max) for this MOSFET?

The Rds On (Max) is 0.28Ω at 8A drain current and 10V gate-source voltage.

What is the typical gate charge (Qg) at Vgs = 10V?

The typical gate charge (Qg) is 78nC at 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIHB15N60E-GE3 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

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