| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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238 pcs
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238 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Vishay SIHB15N60E-GE3 is an N-Channel Power MOSFET from Vishay's E Series, designed for applications requiring efficient power switching. This device features a maximum drain-source voltage of 600V and a continuous drain current rating of 15A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 0.28Ω at 8A and 10V gate-source voltage, and a maximum gate charge (Qg) of 78nC at 10V. The MOSFET operates within a junction temperature range of -55°C to +150°C.
Designed for surface mounting, the SIHB15N60E-GE3 comes in a TO-263-3, D²Pak package. Its features, such as low figure-of-merit and reduced switching losses, make it suitable for various industrial and power supply applications.
Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), and industrial applications like welding and induction heating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The maximum continuous drain current is 15A at 25°C case temperature.
The Rds On (Max) is 0.28Ω at 8A drain current and 10V gate-source voltage.
The typical gate charge (Qg) is 78nC at 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.
Yes, this product is RoHS3 Compliant.