SIHB12N60E-GE3 The Vishay Dale SIHB12N60E-GE3 is an N-Channel Power MOSFET with a 600V drain-source voltage and 12A continuous drain current. It is housed in a surface-mount D2PAK package.
Mfr Part #:

SIHB12N60E-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHB12N60E-GE3 is an N-Channel Power MOSFET with a 600V drain-source voltage and 12A continuous drain current. It is housed in a surface-mount D2PAK package.
✓ Total Stock: 8,603 pcs
$ Price Range: $0.99

SIHB12N60E-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,020 pcs
8020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
583 pcs
583 pcs On Request 1 On Request On Request 14+ On Request On Request

SIHB12N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHB12N60E-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHB12N60E-GE3 is an N-Channel Power MOSFET designed for various power applications. It features a high drain-source voltage rating of 600V and a continuous drain current capability of 12A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 380mOhm at 6A and 10V gate-source voltage, and a gate charge of 58nC at 10V. The MOSFET has a low input capacitance of 937pF at 100V.

 

This device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 147W at 25°C case temperature. It is packaged in a surface-mount D2PAK (TO-263) package, making it suitable for automated assembly processes.

 

Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial uses such as welding and motor drives.

SIHB12N60E-GE3 Quick Information

Product Type: Power MOSFET
Canonical Name: Vishay Dale SIHB12N60E-GE3 N-Channel Power MOSFET
Subcategory: N-Channel

SIHB12N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIHB12N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHB12N60E-GE3 Features

  • 600V drain-source breakdown voltage.
  • 12A continuous drain current.
  • 380mOhm maximum on-resistance.
  • 58nC maximum gate charge.
  • Surface mount D2PAK package.

SIHB12N60E-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications.
  • Renewable energy systems.

SIHB12N60E-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHB12N60E-GE3?

The maximum drain-source voltage is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 12A at 25°C case temperature.

What is the maximum on-resistance at 6A and 10V?

The maximum on-resistance is 380mOhm at 6A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SIHB12N60E-GE3 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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