SIHB12N50C-E3 The Vishay SIHB12N50C-E3 is an N-Channel Power MOSFET designed for 500V applications with a continuous drain current of 12A. It features a low RdsOn of 555mOhm at 10V gate drive.
Mfr Part #:

SIHB12N50C-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SIHB12N50C-E3 is an N-Channel Power MOSFET designed for 500V applications with a continuous drain current of 12A. It features a low RdsOn of 555mOhm at 10V gate drive.
✓ Total Stock: 10 pcs
$ Price Range: $0.99

SIHB12N50C-E3 Available from 1 distributor

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✓ Non-Authorised
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SIHB12N50C-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHB12N50C-E3 Description

Short technical summary and product information.

The Vishay SIHB12N50C-E3 is a single N-Channel Power MOSFET from Vishay Siliconix, designed for high-voltage applications. It offers a maximum drain-source voltage of 500V and a continuous drain current of 12A at 25°C case temperature.

 

Key electrical characteristics include a low on-state resistance (RdsOn) of 555mOhm at 4A drain current and 10V gate-source voltage, and a total gate charge (Qg) of 48nC. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a TO-263-3, D²Pak (TO-263AB) surface-mount package, making it suitable for various power management circuits. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, offering efficient switching capabilities.

 

The device is compliant with RoHS 3 standards and has a Moisture Sensitivity Level (MSL) of 1.

SIHB12N50C-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SIHB12N50C-E3 N-Channel 500V 12A D2PAK MOSFET
Subcategory: N-Channel

SIHB12N50C-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHB12N50C-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHB12N50C-E3 Features

  • 500V drain-source breakdown voltage.
  • 12A continuous drain current.
  • Low 555mOhm RdsOn at 10V.
  • TO-263 surface mount package.
  • N-Channel MOSFET technology.

SIHB12N50C-E3 Applications

  • Used in high-voltage DC-DC converter topologies.
  • Ideal for motor driver bridge circuit implementations.
  • Suitable for industrial power supply switching stages.
  • Applied in automotive ignition and lighting systems.
  • Fits into general purpose high-side switch designs.

SIHB12N50C-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHB12N50C-E3?

The maximum drain-source voltage is 500V.

What is the continuous drain current of the SIHB12N50C-E3?

The continuous drain current is 12A at 25°C case temperature.

What is the RdsOn for the SIHB12N50C-E3?

The RdsOn is a maximum of 555mOhm at 4A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIHB12N50C-E3 available in?

It is available in a TO-263-3, D²Pak (TO-263AB) surface mount package.

Is the SIHB12N50C-E3 RoHS compliant?

Yes, the SIHB12N50C-E3 is RoHS 3 compliant.

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