| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiHA15N65E-GE3 is an N-Channel Power MOSFET designed for high-efficiency power applications. It offers a drain-source voltage of 650V and a continuous drain current of 15A at 25°C case temperature. Key features include a low figure-of-merit (FOM) Ron x Qg, low input capacitance (Ciss), and reduced switching and conduction losses.
This MOSFET is rated for a maximum power dissipation of 34W and operates within a temperature range of -55°C to +150°C. The Rds On is a maximum of 280mOhm at 8A and 10V gate-source voltage, with a gate charge (Qg) of 96nC at 10V. It is available in a Thin-Lead TO-220 FULLPAK package, suitable for through-hole mounting.
Applications for the SiHA15N65E-GE3 include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC) power supplies, and industrial applications such as welding, induction heating, motor drives, and battery chargers. It is also suitable for lighting applications like high-intensity discharge (HID) and fluorescent ballast lighting, as well as renewable energy systems like solar (PV inverters).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220-3 Full Pack (through-hole).
-55°C to 150°C (junction).
15A at 25°C case temperature.
280mOhm maximum at 8A, 10V gate drive.
96nC at 10V gate-source voltage.
286mJ single pulse at 4.5A.