| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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27 pcs
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27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHA100N60E-GE3 is a 4th generation E series N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 12A at 25°C case temperature.
With a low on-state resistance of 100mOhm at 13A and 10V gate-source voltage, this MOSFET offers reduced switching and conduction losses. The typical gate charge is 50nC, and it operates within a junction temperature range of -55°C to +150°C.
This device is housed in a TO-220 Full Pack package, suitable for through-hole mounting. Its robust design includes an avalanche energy rating, making it suitable for demanding industrial applications such as server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), welding, induction heating, motor drives, battery chargers, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 Full Pack (through-hole).
-55°C to 150°C.
Yes, it is lead-free and halogen-free compliant.
12A at Tc=25°C, 8A at Tc=100°C.
100mOhm at Id=13A, Vgs=10V.
50nC maximum at Vgs=10V.