| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Vgs(th) (Max) @ Id |
This Vishay Dale SIF912EDZ-T1-E3 is a dual N-channel MOSFET with a common drain configuration, suitable for various electronic applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.4A. The MOSFET exhibits a low on-resistance (Rds On) of 19mOhm at 7.4A and 4.5V gate-source voltage, ensuring efficient power handling.
Designed with a logic level gate, this component operates effectively with lower gate drive voltages. Its gate charge (Qg) is a maximum of 15nC at 4.5V, and the gate threshold voltage (Vgs(th)) is 1.5V maximum at 250µA. The operating temperature range is from -55°C to 150°C (TJ), and it has a power dissipation of 1.6W.
The SIF912EDZ-T1-E3 comes in a PowerPAK® 2x5 package, designed for surface mounting. This packaging type facilitates efficient heat dissipation and integration into compact PCB designs. The component is classified under MOSFET technology, specifically as a Metal Oxide semiconductor field-effect transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SIF912EDZ-T1-E3 is 30V.
The SIF912EDZ-T1-E3 has a continuous drain current rating of 7.4A.
The Rds On is a maximum of 19mOhm at a drain current of 7.4A and gate-source voltage of 4.5V.
The operating temperature range for the SIF912EDZ-T1-E3 is -55°C to 150°C (TJ).
The SIF912EDZ-T1-E3 is supplied in a PowerPAK® 2x5 package.
This MOSFET is designed for surface mount installation.