| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 06+05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SIE848DF-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It operates with a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 60A at 25°C (Tc).
Key electrical characteristics include a maximum Rds On of 1.6mOhm at 25A and 10V, a gate threshold voltage (Vgs(th)) of 2.5V at 250µA, and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is 6100 pF at 15V, and the gate charge (Qg) is 138 nC at 10V.
This MOSFET has a maximum power dissipation of 5.2W (Ta) or 125W (Tc). It operates within a temperature range of -55°C to 150°C (TJ). The component is constructed using MOSFET (Metal Oxide) technology.
The SIE848DF-T1-GE3 is available in a 10-PolarPAK® (L) package and is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30 V.
The continuous drain current (Id) at 25°C (Tc) is 60A.
The Rds On (Max) is 1.6mOhm at 25A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is an N-Channel MOSFET.
The package type is 10-PolarPAK® (L) for surface mounting.