SIE848DF-T1-E3 The Vishay Dale SIE848DF-T1-E3 is an N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 60A.
Mfr Part #:

SIE848DF-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIE848DF-T1-E3 is an N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 60A.
✓ Total Stock: 45,200 pcs
$ Price Range: $0.99

SIE848DF-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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SIE848DF-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIE848DF-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SIE848DF-T1-E3 is a single N-Channel MOSFET from the TrenchFET® series. It is designed for efficient power switching applications, offering a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 60A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 1.6mOhm at 25A and 10V, a gate threshold voltage (Vgs(th)) of 2.5V at 250µA, and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is 6100 pF at 15V, and the gate charge (Qg) is 138 nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a 10-PolarPAK® (L) package and is designed for surface mounting. The maximum power dissipation is 5.2W (ambient) or 125W (case temperature).

 

Compliance includes RoHS3, MSL 1, and REACH Unaffected status. The component is supplied in Tape & Reel packaging.

SIE848DF-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay Siliconix SIE848DF-T1-E3 N-Channel MOSFET
Subcategory: Single

SIE848DF-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIE848DF-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIE848DF-T1-E3 Features

  • 30V drain-source voltage rating.
  • 60A continuous drain current.
  • Low 1.6mOhm on-resistance.
  • Surface mount 10-PolarPAK package.
  • Wide -55°C to 150°C operating temperature.

SIE848DF-T1-E3 Applications

  • Power switching applications.
  • High current power management.
  • Efficient power conversion circuits.
  • Automotive power systems.
  • Industrial control modules.

SIE848DF-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) for the SIE848DF-T1-E3?

The maximum drain-source voltage (Vdss) is 30 V.

What is the continuous drain current rating?

The continuous drain current (Id) is 60A at 25°C case temperature.

What is the on-resistance (Rds On) of this MOSFET?

The Rds On is a maximum of 1.6mOhm when the drain current is 25A and gate-source voltage is 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SIE848DF-T1-E3 supplied in?

It is supplied in a 10-PolarPAK® (L) package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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