| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
197 pcs
|
197 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SIE810DF-T1-E3 is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 60A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 1.4mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 25A. The gate charge (Qg) is 300nC typical at 10V Vgs. The device operates within a temperature range of -55°C to 150°C.
This MOSFET utilizes TrenchFET Gen II technology and comes in a 10-PolarPAK® surface-mount package. The package is designed for double-sided cooling, offering ultra-low thermal resistance. It is suitable for applications such as VRM, DC/DC conversion (low-side), and synchronous rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 20V.
The continuous drain current is 60A at 25°C case temperature.
The Rds On (Max) is 1.4mOhm at 25A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is in a 10-PolarPAK® (L) surface-mount package.
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.