SIE808DF-T1-E3 The Vishay Dale SIE808DF-T1-E3 is an N-Channel MOSFET designed for power applications. It features 20V drain-source voltage and 60A continuous current.
Mfr Part #:

SIE808DF-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIE808DF-T1-E3 is an N-Channel MOSFET designed for power applications. It features 20V drain-source voltage and 60A continuous current.
✓ Total Stock: 213 pcs
$ Price Range: $0.99

SIE808DF-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
213 pcs
213 pcs On Request 1 On Request On Request 07+ On Request On Request

SIE808DF-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIE808DF-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SIE808DF-T1-E3 is an N-Channel MOSFET belonging to the TrenchFET Gen II Power MOSFET family. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 60A at 25°C case temperature. The device exhibits a low on-resistance (Rds(on)) of 1.6mOhm at 25A and 10V gate-source voltage.

 

This MOSFET is housed in a 10-PolarPAK® (L) package, designed for surface mounting. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 155 nC (typical) at 10V and an input capacitance (Ciss) of 8800 pF (typical) at 10V.

 

The SIE808DF-T1-E3 is compliant with RoHS3 directives and is halogen-free. Its applications include VRM, DC/DC conversion (low-side), and synchronous rectification. The device is 100% Rg and UIS tested, ensuring reliability in demanding applications.

SIE808DF-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiE808DF N-Channel 20V Power MOSFET
Subcategory: N-Channel

SIE808DF-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIE808DF-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIE808DF-T1-E3 Features

  • N-Channel 20V Power MOSFET
  • Low Rds(on) of 1.6mOhm at 10V
  • High continuous current of 60A
  • TrenchFET Gen II technology
  • 10-PolarPAK® package for cooling

SIE808DF-T1-E3 Applications

  • Suitable for VRM applications
  • Used in DC/DC converters
  • Ideal for synchronous rectification
  • Designed for power management

SIE808DF-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIE808DF-T1-E3?

The drain-source voltage (Vds) is 20V.

What is the maximum continuous drain current for the SIE808DF-T1-E3?

The maximum continuous drain current is 60A at 25°C case temperature.

What is the on-resistance of the SIE808DF-T1-E3?

The on-resistance (Rds(on)) is a maximum of 1.6mOhm at 25A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package type is the SIE808DF-T1-E3 in?

It is supplied in a 10-PolarPAK® (L) package for surface mounting.

Is the SIE808DF-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SIE808DF-T1-E3 halogen-free?

Yes, it is halogen-free.

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