| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 0603+ | On Request | On Request |
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| Halogen Free | |
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This Vishay Dale SiE800DF-T1-E3 is an N-Channel MOSFET designed for power applications. It offers a 30V drain-source voltage and a continuous drain current of 50A at 25°C case temperature. The MOSFET exhibits a low on-resistance of 7.2mOhm at 11A and 10V Vgs, contributing to low switching losses.
Featuring TrenchFET technology, this component is suitable for applications requiring high efficiency and thermal performance. The device operates within a temperature range of -55°C to 150°C. It is packaged in a 10-PolarPAK® case and designed for surface mounting.
The SiE800DF-T1-E3 is compliant with RoHS3 standards and is halogen-free. Its ultra-low thermal resistance and top-exposed PolarPAK package allow for double-sided cooling, making it ideal for demanding power conversion tasks like VRM and DC/DC conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
10-PolarPAK (S) surface mount.
-55°C to 150°C.
3V at 250µA.
7.2mOhm maximum at 11A, 10V.
12 nC typical, 35 nC maximum at 10V.
1600 pF at 15V.