| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,581 pcs
|
2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIDR870ADP-T1-GE3 is a single N-Channel MOSFET designed for power applications. It offers a high drain-source voltage of 100V and can handle a continuous drain current of up to 95A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 6.6mOhm at 20A and 10V gate-source voltage. The gate charge (Qg) is typically 25.5nC, with a maximum of 80nC at 10V. Input capacitance (Ciss) is rated at a maximum of 2866pF at 50V.
This MOSFET is housed in a PowerPAK SO-8DC surface-mount package, facilitating efficient thermal transfer with its top-side cooling feature. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 125W at 25°C case temperature.
Applications include synchronous rectification, primary side switching, DC/DC converters, OR-ing, power supplies, and motor drive control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
PowerPAK SO-8DC.
-55°C to 150°C (junction temperature).
95A at case temperature 25°C.
3V at 250µA drain current.
125W at case temperature 25°C.
6.6mOhm maximum at 20A drain current and 10V gate drive.