| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIDR668DP-T1-GE3 is an N-Channel Power MOSFET featuring TrenchFET Gen IV technology. It is rated for a 100V drain-source voltage and offers very low on-resistance, with a maximum of 4.8mOhm at 20A and 10V gate drive. The continuous drain current is 95A when measured at the case temperature and 23.2A when measured at ambient temperature.
This MOSFET is designed for applications requiring efficient power switching, such as synchronous rectification, DC/DC converters, and power supplies. It utilizes the PowerPAK SO-8DC package, which provides a surface mount solution with enhanced thermal transfer capabilities. The operating temperature range is from -55°C to +150°C.
Key electrical characteristics include a gate charge (Qg) of 55nC typical and an input capacitance (Ciss) of 5400pF. The device is tested for Rg and UIS, ensuring reliability in demanding applications. Its low RDS-Qg figure-of-merit makes it suitable for optimizing power conversion efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
PowerPAK SO-8DC surface mount package.
-55°C to 150°C.
95A at case temperature 25°C, or 23.2A at ambient temperature 25°C.
55nC.
4.8mOhm maximum at 20A drain current and 10V gate-source voltage.
Junction-to-case thermal resistance is 1°C/W (drain) and 1.4°C/W (source).